NE33200 fet equivalent, super low noise hj fet.
* VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz
Optimum Noise Figure, NFOPT (dB)
4 3.5
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
24 21 1.
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
Frequency, f (GH.
The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain m.
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